Fraunhofer Institute for Integrated Systems and Device Technology IISBHere we provide selected presentations (talks and posters) from conferences, workshops, etc. for download.
If you are interested in further information, please feel free to contact us.
Presentations
Tabbed contents
2026
SPIE Advanced Lithography + Patterning 2026
February 22 to 26, 2026, San Jose, United States
Benefits of Mask3D Effects in High-NA and Hyper-NA EUV Lithography
by A. Erdmann et al.
German Crystal Growth Conference (DKT 2026)
March 4 to 6, 2026, Karlsruhe, Germany
Wafer Defect Detection of Aluminum Nitride Wafers
by C. Straub et al.
Physics-informed Neural networks for Coupled Heat Transport
by C. Straub et al.
International Conference on Integrated Power Electronics Systems 2026 (CIPS 2026)
March 12 to 14, 2026, Dresden, Germany
Impact of Current Density, Accumulated Injected Charge and Temperature on Bipolar Degradation in 4H-SiC PiN Diodes
by R. Bagchi et al.
Physics Informed Surrogate Modeling Approach for Lifetime Prediction in Power Electronics Assembly based on Mission Profiles
by A. Bose et al.
Junction Temperature Measurement in Power Modules - Challenges of parallel SiC MOSFETs with VSD Imbalance
by J. Breuer et al.
Active Lifetime Testing of DC-Link Capacitors - Test Setup and Parameter Study
by F. Dresel et al.
TCAD Study on Parallel SiC Two-Pole SSCB Chips Integrated Into a 900 V Power Module
by M. Keck et al.
Experimental Validation of a FE Combined Lifetime Model for Power Cycling Capability of a SiC Power Module
by D. Zhao et al.
2025
SPIE Advanced Lithography + Patterning 2025
February 23 to 27, 2025, San Jose, United States
PCIM 2025 – Power electronics, intelligent motion, renewable energy, and energy management
May 6 to 8, 2025, Nuremberg, Germany
Ultracompact Symmetrical Medium Voltage DC-DC Converter for Electrified Aircraft
by Malavika Santhosh Kumar et al.
Machine Learning and Digital Twins for RUL Prediction of DC Semiconductor Circuit Breakers
by Lena Köhler et al.
IISB2 Topology for 48 V to 1 V Point of Load Applications
by Stefan Zeltner et al.
15th International Conference on Nitride Semiconductors (ICNS-15)
July 6 to 11, 2025, Malmö, Sweden
International Conference on Silicon Carbide and Related Materials (ICSCRM 2025)
September 14 to 19, 2025, Busan, Korea
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2025
September 24 to 26, 2025, Grenoble, France
Power of Electronics 2025
October 29 to 30, 2025, Würzburg, Germany
Aktueller Überblick zur DC-Normung
B. Wunder et al.
FAU LMQ (Light.Matter.QuantumTechnologies) Science Day
November 12, 2025, Erlangen, Germany
SiC Quantum Technology
by P. Berwian et al.
2024
SPIE Advanced Lithography + Patterning 2024
February 25 to 29, 2024, San Jose, United States
International Conference on Integrated Power Electronics Systems 2024 (CIPS 2024)
March 12 to 14, 2024, Düsseldorf, Germany
Challenges of Junction Temperature Calibration of SiC MOSFETs for Power Cycling – a Dynamic Approach
by J. Breuer et al.
Milliseconds Power Cycling (PCmsec) Driving Bipolar Degradation in Silicon Carbide Power Devices
by S. Laha et al.
Modified Approach for the Rainflow Counting Analysis of Temperature Load Signals in Power Electronics Modules
by S. Letz et al.
Wide Bandwidth PCB Rogowski Coil Current Sensor with Droop Suppression and DC Restoration for In-Situ Inverter Measurements
by S. Quergfelder et al.
PCIM Europe 2024 – Power electronics, intelligent motion, renewable energy, and energy management
June 11 to 13, 2024, Nuremberg, Germany
IEEE International Conference on DC Microgrids 2024 (ICDCM 2024)
August 5 to 8, 2024, Columbia, United States
Evaluation of Semiconductor-based Isolation for Electric Vehicle Chargers in DC Microgrids
by K. Drexler et al.
Novel Device for Fast Detection and Limitation of Short-circuit Currents in LVDC Grids
by J. Gehring et al.
Exploration of Use-case-dependent Modeling Approach for Distributed DC Grids
by M. Lavery et al.
DC-Microgrid Application, Use Cases and Standardization in Europe
by B. Wunder
International Conference on Silicon Carbide and Related Materials 2024 (ICSCRM 2024)
September 29 to October 4, 2024, Raleigh, United States
Gate Oxide Performance and Reliability on SmartSiC TM Wafers and the Influence of RTA Processing on Gate Oxide Lifetime
by T. Becker et al.
Formation of Structured Low-ohmic p-type Contacts on Al-implanted 4H-SiC by Laser Annealing
by C. Hellinger et al.
Determining Compensation of Implanted Aluminum Dopants by Simultaneous Fitting of Charge Carrier Concentration and Mobility
by J. Kauth et al.
On the Relationship of Processing Parameters and Epitaxial Defects to Extrinsic Failure in SiC Gate Oxide
by H. Schlichting et al.