36. Treffen der Nutzergruppe Heißprozesse und RTP

Begrüßung
Anton Bauer, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB), Erlangen
Wilfried Lerch, centrotherm photovoltaics AG, Blaubeuren

Kurzvorstellung Infineon Technologies
Ralf Zedlitz, Infineon Technologies, Dresden

III-V Compound Semiconductors in Si by Ion Implantation and Flash Lamp Annealing
René Wutzler, Helmholtz-Zentrum Dresden-Rossendorf (HZDR)

Dopant Profile Engineering using ArF Excimer Laser, Flash Lamp and Spike Annealing for Junction Formation
Alexander Scheit, IHP, Frankfurt (Oder)

In-line RTP Monitoring using microRSP-A300
Bo Svarrer Hansen, CAPRES A/S, Garching

Formation of Large Grain Silicon Islands in the Flash Crystallization of Amorphous Silicon
Thomas Henke, Technische Universität Dresden

Differential Thermal Energy Control for Pattern Effect Suppression in RTA
Alexandr Cosceev, Mattson Thermal Products, Dornstadt

RAPID200 for Silicidation Processing
Wilfried Lerch, centrotherm photovoltaics, Blaubeuren

Using Low Pressure POCl3 Diffusion Furnace for Advanced Emitter Profiles of Solar Cells
Wilfried Lerch, centrotherm photovoltaics, Blaubeuren