Wide-Bandgap Semiconductor Technology & New Unit Processes for Deposition and Etch

Rückblick auf 25 GMM-Workshops "Abscheide- und Ätzverfahren"
Werner Robl, Infineon Technologies, Regensburg & Georg Roeder, Fraunhofer IISB, Erlangen
 

New Unit Processes for Deposition and Etch

Pulsed Laser Deposition
Raimund Förg, Technische Hochschule Deggendorf / Technologiecampus Teisnach Sensorik, Deggendorf

Pulsed Laser Deposition - what's next?
Renzo Stheins, Lam Research, Enschede Overijssel, Netherlands

Plasma-Etch End-Pointing in III-V Compound Semiconductor-Based Device Structures
Marcello Binetti, LayTec, Berlin

Shifting Supply Chains for 200 mm or Smaller Legacy PVD, PECVD and Plasma Etch Equipment
Toni Sandbrink-Koblenz, memsstar ltd., Livingston, United Kingdom

FALP - Fast Atomic Layer Processing: PEALD (Plasma Enhanced Atomic Layer Deposition) & ALE (Atomic Layer Etch) in one Chamber!
Stephan Wege, plasway-Technologies, Bannewitz
 

Wide-Bandgap Semiconductor Technology

The Advantages of High-k Dielectrics for SiC Power MOSFETs
Moritz Wehrle, Hitachi Energy, Aargau, Switzerland

Ion Traps for Quantum Computing
Helmut Schönherr, Infineon Technologies Austria, Villach, Austria

Steady-State Etch for GaN/AlGaN Applications
Richard Barnett, KLA/SPTS Technologies, Newport, United Kingdom

Etch & Deposition Process Solutions for SiC Power Applications
Richard Barnett, KLA/SPTS Technologies, Newport, United Kingdom