December 9, 2015
Fraunhofer IISB, Erlangen
Fraunhofer IISB, Erlangen
The Benefits & Challenges of Plasma Dicing
Richard Barnett, SPTS Ltd., Newport/Wales, United Kingdom
Plasma Dicing 4 Thin Wafers
Reinhard Windemuth, Panasonic Automotive & Industrial Systems Europe GmbH, Ottobrunn, Germany
Plasma dicing: From Powerpoint to Production
Tobias Sprogies, NXP Semiconductors Germany GmbH, Hamburg, Germany
Plasma dicing trench depth and width, copper step height and roughness measurements with an optical profilometer
Franz Heider, Infineon Technologies Austria AG, Villach, Austria
Fabrication of ultra-thin layers by sputtering
Berthold Ocker, Singulus Technologies AG, Kahl am Main, Germany
Electronic Conduction in PECVD Silicon Nitride
Helmut Schönherr, Daniel Pieber, Infineon Technologies Austria AG, Villach, Austria; TU Graz, Graz, Austria
Nickelsilicide integration into SiGe-BiCMOS and comparison to Cobaltsilicide
Dirk Wolansky, IHP GmbH, Frankfurt (Oder), Germany
End-point control in CVD cleaning processes
Anett von Dalowski; Jerome Cannon, SPM AG, Schaan, Liechtenstein; Forth-Rite Technologies, LLC., Austin, Texas, USA
Classification and key feature extraction for equipment health monitoring in plasma etching
Christopher Krauel, Fraunhofer IISB, Erlangen, Germany