Workshop "New developments and process optimization in deposition and etching "

New developments in deposition and etching
M. Kozlowska, Fraunhofer IISB, Germany

Deposition and characterization of ruthenium prepared by pulsed MOCVD
G. Roeder (1) P. Baumann (2), (1) Fraunhofer IISB, Erlangen, Germany, (2) AIXTRON AG, Aachen, Germany

Process integration for 3D-ICs
D. Thomas, Aviza Technology GmbH, Dresden, Germany

Plasma process development and control with real-time critical process parameter detection at the wafer surface
M. Tesauro, Qimonda Dresden GmbH & Co. OHG, Dresden, Germany

Double patterning
M. Markert, Qimonda Dresden GmbH & Co. OHG, Dresden, Germany

How process simulation could help to assess and improve the quality of statistical models for process control
G. Spitzelsperger, Renesas Semiconductor Europe GmbH

Throughput optimization on AMAT ENDURA PVD equipment
C. Bromberger, A. Priebe, Atmel Germany GmbH, Heilbronn, Germany

Wafer flatness measurement
A. Nutsch, Fraunhofer IISB, Erlangen, Germany