November 14, 2006
Fraunhofer IISB, Erlangen
Fraunhofer IISB, Erlangen
Improved wafer yield by bevel engineering
M. Schmidt, Qimonda Dresden GmbH & Co. OHG, Germany
Endpoint detection for low open area contact etch
M. Schardin, Qimonda Dresden GmbH & Co. OHG, Germany
New developments in deposition
Electroplated metallization in automotive semiconductors
W. Robl, Infineon AG, Regensburg, Germany
Precursor selection and chemical delivery challenges in advanced materials processing
H. Treichel, F. Schoene, Aviza Technology GmbH, Dresden, Germany
Characterization of ruthenium layers for MIM capacitor applications prepared by atomic vapor deposition
P. Baumann, C. Manke, AIXTRON AG, Aachen, Germany
Optimization of mechanical layer properties
Measurement and influence of local mechanic stress in silicon wafers
B. Dietrich, IHP-Innovations for high performance microelctronics, Frankfurt (Oder), Germany
Raman spectroscopy for microelectronic applications
R. Geiger, HORIBA Jobin Yvon GmbH, Bensheim, Germany
Transistor performance enhancement by the use of stress engineering
C. Kurthen, Applied Materials GmbH, Dresden, Germany
Influences on stress in metal layers
C. Bromberger, A. Priebe, Atmel Germany GmbH, Heilbronn, Germany