November 26, 2003
Fraunhofer IISB, Erlangen
Fraunhofer IISB, Erlangen
Ätzen kleiner Strukturen und neuer Materialien
ITRS: The Roadmap of Material Challenges
Dr. Manfred Engelhardt, Infineon Technologies AG, Munich, Germany
Line edge roughness investigations for dielectric etches with 193nm lithography
Dr. Stefan Machill, Infineon Technologies AG, Dresden, Germany
Influence of resist strip on low-k materials
Dr. Robert Müller, Mattson International GmbH, Dornstadt, Germany
Prozessstabilität
Influence of organic and inorganic masks on process stability
Klaus Reingruber, Infineon Technologies AG, Regensburg, Germany
Integrated metrology for gate-etch control
Joachim Dannenberg, Lam Research GmbH, Ismaning, Germany
Advanced etch-to-depth process control
Ralf Tiede, Applied Materials GmbH, Dresden, Germany
High aspect ratio silicon trench etch using a high density plasma source with interferometric endpoint detection
Kevin Powell, Trikon Technologies Ltd., Newport, United Kingdom
In situ monitoring of a via-etch process
Gerhard Spitzlsperger, Renesas Semiconductor Europe (Landshut) GmbH, Germany