June 28, 2000
Fraunhofer IISB, Erlangen
Fraunhofer IISB, Erlangen
Low-k Materialien
Stand des Einsatzes von ultra low – k Materialien
Dr. Stefan E. Schulz, TU Chemnitz
Integration issues of low-k oxazole dielectrics
Dr. Recai Sezi, Infineon Technologies AG
CVD low-k Solutions for Cu Damascene
Christof Kurthen, Applied Materials GmbH
Low-k IMD films on Novellus Sequel Express
Dr. Christian Denisse, Novellus Systems BV
TI/TiN und Cu-Abscheidung
Novel metallization scheme using nitrogen passivated Ti-liner for AlCu based metallization
Norbert Urbansky, Infineon Technologies AG
In situ Ti/TiN Abscheidung
Dr. Hermann Wendt, Applied Materials GmbH, Infineon Technologies AG
Copper deposition for interconnects
Dr. Andreas Thies, Atotech
Copper/Coral Dual Damascene Process Integration
Dr. Christian Denisse, Novellus Systems BV
Advanced Process Control
Introduction of Advanced Process Control in High Volume Semiconductor Production
Dr. Hans-Peter Erb, Infineon Technologies AG
Algorithmen zur Auswertung hochdimensionaler Sensordaten für das Monitoring von Plasmaprozessen am Beispiel der optischen Emissionsspektroskopie
Jan Zimpel, Fraunhofer IVI, IITB
AEC/APC-Lösungen für die Meßtechnikintegration und Prozesskontrolle
Georg Roeder, Fraunhofer IISB
Self Excited Electron Plasma Resonance Spectroscopy
Dr. Wolfgang Rehak, ASI
Strategy of advanced process control at Trikon
Wolfram Girke, TRIKON Technologies GmbH
In situ Partikelmonitoring
Jürgen Fandrich, Applied Materials GmbH