December 07, 2010
Fraunhofer IISB, Erlangen
Fraunhofer IISB, Erlangen
Fraunhofer CNT -CompetenceAreas
Matthias Rudolph, Fraunhofer CNT, Dresden, Germany
Output MatchingMET1 & MET2
Alexander Scheit, Dirk Wolansky, IHP InnovationsforHigh Performance, Frankfurt (Oder), Germany
ProcessWCVD400nm-WEB
Jewgenij Winokurow, Vishay, Itzehoe, Germany
Monitor-Wafer-Verbrauch Metallisierung
Volker Götz, X-FAB SemiconductorFoundriesAG, Erfurt, Germany
Prozessprobleme ILD-Stack0.25μm-Technologie
Marco Lisker, IHP InnovationsforHigh Performance, Frankfurt (Oder), Germany
Optimizationof etchprocessesforULK materialsusingin situdiagnostics
Sven Zimmermann et al., Fraunhofer ENAS, Chemnitz, Germany
Neue Gase zur Metallstrukturierung CF4 und C2H4
Tobias Sprogies, X-FAB Dresden GmbH & Co. KG, Germany
Polymer residual issueaftermetal etch
Andreas Höhn, X-FAB SemiconductorFoundriesAG, Erfurt, Germany