Fraunhofer Institute for Integrated Systems and Device Technology IISBThe continuous reduction in product development times and the high cost pressure place special challenges for the developers of power electronic systems. In an early project stage, the optimal selection of the active or passive components saves time and costs. With our comprehensive test facilities, we evaluate the potential of new technologies for your application in close coordination with you. We also offer you to convert these measurements into powerful simulation models for your virtual prototype.
Device Characterization
Fields of Research
- Innovative power module concepts with integrated circuit components customized for specific semiconductor technology (Si, SiC, GaN, etc.) and targeted application
- Simulative and metrological determination of module parasitics, containing self- and mutual inductances as well as inductive and capacitive couplings
- Methods for transferring electric module parameters to virtual switching cell prototypes within different circuit simulator environments
Services
- Development of high performance application oriented power modules with tuned commutation loop and gate circuit characteristics
- Realization of power module prototypes
- Experimental characterization of power modules and determination of switching and conduction losses
- Analysis of current density distribution & parasitic elements for existing power modules and circuit boards
- Setup virtual switching cell prototypes (digital twin) to predict the switching behavior and to guarantee the compliance with voltage and current ratings
Fields of Research
- Exploration the potential of WBG power semiconductor devices through perfectly matched performance modules
- Identification of the influencing factors beased on detailed knowledge of the interactions on module and switch level
- Conclusion on the behavior of the power module by characterizing the individual switches as well as the modeling of electrical properties of the leads
Services
- Semiconductor and module measurement up to 3,3 kV, 1500A and in the range of -40 – + 600 °C
- Application-related characterization of the components
- Free parameter selection and thus generation of measurement results compatible with existing databases
- Creation of data sheets and capable simulation models
Fields of Research and Services
- Power semiconductor benchmarks
- Evaluation of novel devices in highly efficient power electronic systems
- Device modelling for computer-based system optimization and virtual prototyping
- Verification of measured and simulated device characteristics
- Modelling of all application-related device characteristics
Features
- Highly dynamic switch and diode characterization up to 2000 V, 100 A, 250 °C
- All kinds of packaged and bare die devices
- Flexible gate drive for normally-on and off behavior
- Extended features like switching energy, gate charge, on resistance, diode charge according to international standards
- Ease of use automated documentation and numerical database generation for device modeling
Fields of Research
- Application-related component characterization
- Performance Assessment of novel ferrite materials for power electronics
- Component modeling for computer-aided system design
- Improvement of the performance of the system - taking into account component losses, building space or weight
Services
The values in the data sheets of the ferrite materials are often insufficient to design these powerful inductive components for a specific application.
That is why we offer standardized material measurements:
- Material-specific losses with DC bias
- Perviousness
- Hysteresis
- Saturation flow for different temperatures
At the component level, we perform the following measurements:
- magnetic parameters (eg inductance, coupling, saturation current)
- Power dissipation measurement for different temperatures and with large signal