Focus of this work is the development of novel capacitors regarding higher integration density, higher temperature and higher voltage stability as well as simplified mounting and assembly. The devices rely on a proprietary manufacturing technology developed at Fraunhofer IISB to expand applicability of silicon capacitors from memory and logic level applications to power electronics. Present devices achieve a continuous operating voltage of up to 900V. Thus, they are ideal suited for the application in fast switching power modules with 1200V SiC power MOSFETs.