One year of (U)WBG metrology joint lab with Semilab!

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The set-up for WBG, SiC and GaN characterization at the IISB is completed.

© Daniel Karmann / Fraunhofer IISB

Our joint lab with Semilab ZRT now enables us to cover the complete portfolio for metrology and inspection for wide-bandgap wafers - from epitaxy to processed devices:
 

  • surface roughness with atomic force microscopy (AFM)
  • spreading resistance profiling with advanced point contact IV-techniques
  • non-contact resistivity and minority carrier lifetime measurement with eddy current and µPCD
  • non-contact and non-damaging monitoring of ion implantation parameters via PMR
  • quantitative analysis utilizing enhanced infrared reflectometry and ellipsometry
  • polarised stress imaging (PSI) detection of crystalline defects
  • non-contact, non-destructive corona based CV-techniques

We celebrated this milestone with a big metrology workshop for wide-bandgap materials and welcomed guests from the European compound / SiC & GaN semiconductor industry here at the IISB.

© Daniel Karmann / Fraunhofer IISB
© Daniel Karmann / Fraunhofer IISB
© Daniel Karmann / Fraunhofer IISB
© Daniel Karmann / Fraunhofer IISB
© Daniel Karmann / Fraunhofer IISB
© Daniel Karmann / Fraunhofer IISB
© Daniel Karmann / Fraunhofer IISB
© Daniel Karmann / Fraunhofer IISB
© Daniel Karmann / Fraunhofer IISB

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