One year of (U)WBG metrology joint lab with Semilab!
The set-up for WBG, SiC and GaN characterization at the IISB is completed.
Our joint lab with Semilab ZRT now enables us to cover the complete portfolio for metrology and inspection for wide-bandgap wafers - from epitaxy to processed devices:
- surface roughness with atomic force microscopy (AFM)
- spreading resistance profiling with advanced point contact IV-techniques
- non-contact resistivity and minority carrier lifetime measurement with eddy current and µPCD
- non-contact and non-damaging monitoring of ion implantation parameters via PMR
- quantitative analysis utilizing enhanced infrared reflectometry and ellipsometry
- polarised stress imaging (PSI) detection of crystalline defects
- non-contact, non-destructive corona based CV-techniques
We celebrated this milestone with a big metrology workshop for wide-bandgap materials and welcomed guests from the European compound / SiC & GaN semiconductor industry here at the IISB.
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