We're now able to measure resistance profiles without the need of processing specific test structures with ohmic contacts. This is especially crucial for (U-)WBG materials, because here it is particularly difficult to verify after doping processes to which extent the dopant atoms have been activated and provide free charge carriers. The technical basis is the method of Point Contact Current Voltage (PCIV) measurements, similar to the well-known Spreading Resistance Profiling (SRP) in silicon, which also can be performed with the tool.

Our partners from Semilab visited us on site at Fraunhofer IISB to brief our colleagues on the new measuring system.
In true joint lab spirit, we are looking forward to advancing UWBG R&D with our partners and upgrade our semiconductor process knowhow!

Semiconductor devices at Fraunhofer IISB